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专利名称：Method of fabricating SOI wafer发明人：Kiyoshi Mitani,Isao Yokokawa申请号：US10495988申请日：20021031公开号：US07084046B2公开日：20060801
专利附图：
摘要：After completion of annealing for bonding of the base wafer and bond wafer ,the bond wafer is thinned to a first thickness suitable for ion implantation, and boron ision-implanted to thereby form a high-boron-concentration layer . A second thinning stepbased on selective etching is then carried out while using the high-boron-concentration
layer as an etch stop layer. This is successful in providing a method of fabricating an SOIwafer which is suppressed both in intra-wafer uniformity of the firm thickness and in inter-wafer uniformity of the film thickness even when a required level for the thickness of theSOI layer is extremely small.
申请人：Kiyoshi Mitani,Isao Yokokawa
地址：Annaka JP,Annaka JP
国籍：JP,JP
代理机构：Oliff & Berridge PLC
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