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专利名称：Method of fabricating SOI wafer发明人：Tomohiro Okamura,Masao Okihara申请号：US12926123申请日：20101027
公开号：US20110117741A1公开日：20110519
专利附图：
摘要：There is provided a method of fabricating an SOI wafer, the method including: a)preparing a bonded SOI substrate that has a buried oxide layer and an SOI layer formedin this sequence on a circular plate shaped support, and at a peripheral edge portion ofthe support substrate, has a silicon island region in which the SOI layer is not well formedwith scattered defective silicon layer; b) etching a silicon island region defective siliconlayer to remove the defective silicon layer scattered in the silicon island region by dryetching; and c) etching a silicon island region buried oxide layer to remove the buriedoxide layer in the silicon island region by wet etching.
申请人：Tomohiro Okamura,Masao Okihara
地址：Miyagi JP,Miyagi JP
国籍：JP,JP
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