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专利名称：Vertical mis-field effect transistor with low
forward resistance
发明人：Jeno Tihanyi申请号：US06/724792申请日：19850419公开号：US04630084A公开日：19861216
摘要：MIS-FET, including a semiconductor substrate of a given first conductivity typehaving first and second surfaces, at least one channel zone of a second conductivity typeopposite the first conductivity type embedded on the first surface of the substrate, asource zone of the first conductivity type embedded in the channel zone, a drain zoneadjoining the first surface of the substrate, a drain electrode connected to the secondsurface of the substrate, and insulating layer disposed on the first surface of thesubstrate, at least one gate electrode disposed on the insulating layer, at least oneinjector zone of the second conductivity type embedded in the first surface of thesubstrate, and a contact being connected to the at least one injector zone andconnectible to a voltage supply.
申请人：SIEMENS AKTIENGESELLSCHAFT
代理人：Herbert L. Lerner,Laurence A. Greenberg
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