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专利名称：Method for evaluation of transition region
of silicon epitaxial wafer
发明人：Miki, Katsuhiko申请号：EP403272.1申请日：191127公开号：EP0370919A2公开日：19900530
专利附图：
摘要：This method is a method for evaluation of transition region (ℓ) of silicon epitaxialwafer comprising obtaining the waveform of interferogram signal for reflected light (6,7)which is obtained by irradiating infrared radiation (1) to the silicon epitaxial wafer (S) by
measurement of intensity of light of interference fringe employing a Michelson
interferometer and obtaining extent of the transition region of the silicon epitaxial waferby obtaining a distance between the maximum peak of the waveform in side burst regionin the interferogram signal and the peak adjacent to said maximum peak of the waveformin side burst region in the interferogram signal and a distance between the maximumpeak and the bottom first coming after said maximum peak of the waveform in side burstregion in the interferogram signal or a difference in height between the maximum peakand the bottom first coming after said maximum peak of the waveform in side burstregion in the interferogram signal.
申请人：SHIN-ETSU HANDOTAI COMPANY LIMITED
地址：4-2, Marunouchi 1-Chome Chiyoda-ku Tokyo JP
国籍：JP
代理机构：CABINET BONNET-THIRION
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