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专利名称：Metal thin film for interconnection of
semiconductor device
发明人：Takashi Onishi,Masao Mizuno,Mikako
Takeda
申请号：US11465626申请日：20060818公开号：US07928573B2公开日：20110419
专利附图：
摘要：A metal thin film used in fabricating a damascene interconnection of asemiconductor device which exhibits excellent high temperature fluidity during highpressure annealing, and which can fabricate an interconnection for a semiconductordevice which has a low electric resistance and stable high quality is provided. Alsoprovided is an interconnection for a semiconductor device. More specifically, a metal thin
film for use as an interconnection of a semiconductor device comprising a Cu alloycontaining N at a content of not less than 0.4 at % to not more than 2.0 at %; and aninterconnection for a semiconductor device fabricated by forming the metal thin film onan insulator film which is formed on a semiconductor substrate and which has groovesformed therein, and filling the metal thin film in the interior of the grooves by a highpressure annealing process are provided.
申请人：Takashi Onishi,Masao Mizuno,Mikako Takeda
地址：Kobe JP,Kobe JP,Kobe JP
国籍：JP,JP,JP
代理机构：Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
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