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专利名称：Flash memory device and method of erasing
flash memory cell thereof
发明人：Jin Su Park申请号：US11011725申请日：20041214公开号：US07161842B2公开日：20070109
专利附图：
摘要：A flash memory device and method of erasing flash memory cells thereof areprovided. The erase of a cell block unit or a page unit is effected by a word line switchincluded in a predecoder according to a page erase signal. If the erase is effected in the
cell block unit, all word lines of one cell block are made to keep 0V. Meanwhile, if theerase is effected in the page unit, only word lines of a corresponding page are made tokeep 0V and the remaining word lines are made floated, so that the erase is notperformed. Accordingly, the erase can be carried out in the cell block unit or the pageunit. It is thus possible to improve efficiency of data management.
申请人：Jin Su Park
地址：Daegu-Shi KR
国籍：KR
代理机构：Marshall, Gerstein & Borun LLP
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