专利内容由知识产权出版社提供
专利名称：Method of fabricating a high-voltage field-effect transistor
发明人：Rumennik, Vladimir,Disney, Donald R.,Ajit,
Janardhanan S.
申请号：EP10182706.1申请日：20000131公开号：EP22772B1公开日：20170712
摘要：A method for making a high voltage insulated gate field-effect transistor havinga source region (14) and a drain region (19,17) comprises the steps of forming the drainregion with an extended well region (17) having a buried layer (18) of opposite
conduction type implanted therein. The buried layer creates an associated pair of parallelJFET conduction channels (24,25) in the well region. A minimal number of processingsteps are required to form the parallel JFET conduction channels which provide the field-effect transistor with a low on-state resistance.
申请人：POWER INTEGRATIONS INC
地址：US
国籍：US
代理机构：Conroy, John
更多信息请下载全文后查看
