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专利名称：Method for Making a Pillar-Type Phase
Change Memory Element
发明人：Hsiang-Lan Lung,ChiaHua Ho申请号：US11456922申请日：20060712
公开号：US20080014676A1公开日：20080117
专利附图：
摘要：A pillar-type phase change memory element comprises first and secondelectrode elements and a phase change element therebetween. A second electrodematerial and a chlorine-sensitive phase change material are selected. A first electrode
element is formed. The phase change material is deposited on the first electrodeelement and the second electrode material is deposited on the phase change material.The second electrode material and the phase change material are etched without the useof chlorine to form a second electrode element and a phase change element. The secondelectrode material selecting step, the phase change material selecting step and theetching procedure selecting step are carried out so that the phase change element is notundercut relative to the second electrode element during etching.
申请人：Hsiang-Lan Lung,ChiaHua Ho
地址：Elmsford NY US,Kaohsiung City TW
国籍：US,TW
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