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专利名称：GaN-based permeable base transistor and
method of fabrication
发明人：Liberty L. Gunter,Kanin Chu,Charles R. Eddy,
Jr.,Theodore D. Moustakas,Enrico Bellotti
申请号：US12268515申请日：20041001公开号：USRE042955E1公开日：20111122
专利附图：
摘要：An etched grooved GaN-based permeable-base transistor structure isdisclosed, along with a method for fabrication of same.
申请人：Liberty L. Gunter,Kanin Chu,Charles R. Eddy, Jr.,Theodore D. Moustakas,EnricoBellotti
地址：Hudson NH US,Nashua NH US,Columbia MD US,Dover MA US,Watertown MA US
国籍：US,US,US,US,US
代理机构：Vern Maine & Associates
代理人：Andrew Paul Cernota
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