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专利名称：Method for Patterning a Sequence of Layers
and Semiconductor Laser Device
发明人：Christian Rumbolz,Sven Gerhard申请号：US15517144申请日：20150921
公开号：US20170302058A1公开日：20171019
专利附图：
摘要：A method for patterning a sequence of layers and a semiconductor laser deviceare disclosed. In an embodiment the method creates at least one trench in the sequenceof layers by two plasma etching methods. The semiconductor laser device comprises a
sequence of layers including a semiconductor material and two trenches in the sequenceof layers. The trenches laterally delimit a ridge waveguide. Each of the trenches isdelimited on the side facing away from the ridge waveguide by a region of the sequenceof layers.
申请人：OSRAM Opto Semiconductors GmbH
地址：Regensburg DE
国籍：DE
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