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专利名称：Chemical-sensitization photoresist
composition
发明人：Hideo Hada,Kazufumi Sato,Hiroshi Komano申请号：US09562458申请日：20000502公开号：US06388101B1公开日：20020514
摘要：Proposed is a chemical-sensitization positive-working photoresist compositionfor photolithographic patterning in the manufacture of semiconductor devices havinghigh transparency even to ultraviolet light of very short wavelength such as ArF excimerlaser beams of 193 nm wavelength to exhibit high photosensitivity and capable of giving apatterned resist layer with high pattern resolution. The composition comprises (A) aresinous ingredient which is subject to an increase of the solubility in an aqueous alkalinedeveloper solution in the presence of an acid and (B) a radiation-sensitive acid-generatingcompound. Characteristically, the resinous ingredient as the component (A) is a
(meth)acrylic copolymer of which from 20% to 80% by moles of the monomeric units arederived from a (meth)acrylic acid ester of which the ester-forming group has a specificoxygen-containing heterocyclic ring structure.
申请人：TOKYO OHKA KOGYO CO., LTD.
代理机构：Wenderoth, Lind & Ponack, LLP
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