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专利名称：MEMS structure and method for fabricating
the same
发明人：Jong Sam Kim,Sung Jun Lee,Ro Woon Lee申请号：US10927459申请日：20040827公开号：US07074635B2公开日：20060711
专利附图：
摘要：A MEMS structure includes a floating space formed on the upper silicon layerby a first dry etching, and then dry etched to a predeterminded depth on the lowersilicon layer by etching gas supplied through the etched holes from which the oxide film
has been removed at the bottom surface thereof in a second dry etching process, so asto float the movable portion; and the oxide film for preventing electrical short circuitremaining on the lower surface of the movable portion so as to correspond to the lowersilicon layer leaving the floating space therebetween.
申请人：Jong Sam Kim,Sung Jun Lee,Ro Woon Lee
地址：Kyungki-do KR,Seoul KR,Seoul KR
国籍：KR,KR,KR
代理机构：Lowe Hauptman & Berner, LLP.
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