专利内容由知识产权出版社提供
专利名称：MEMS STRUCTURE AND METHOD OF
FABRICATING THE SAME
发明人：Meng-Jia Lin,Yung-Hsiao Lee,Weng-Yi
Chen,Shih-Wei Li,Chung-Hsien Liu
申请号：US14993105申请日：20160112
公开号：US2017011A1公开日：20170615
专利附图：
摘要：A method of fabricating a MEMS structure includes providing a substratecomprising a logic element region and a MEMS region. Next, a logic element is formed
within the logic element region. A nitrogen-containing material layer is formed to coverthe logic element region and the MEMS region conformally. Then, part of the nitrogen-containing material layer within the MEMS region is removed to form at least oneshrinking region. Subsequently, a dielectric layer is formed to cover the logic elementregion and MEMS region, and the dielectric layer fills in the shrinking region. After that,the dielectric layer is etched to form at least one releasing hole, wherein the shrinkingregion surrounds the releasing hole. Finally, the substrate is etched to form a chamber.
申请人：UNITED MICROELECTRONICS CORP.
地址：Hsin-Chu City TW
国籍：TW
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