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专利名称：Method of forming conductive metal
silicides by reaction of metal with silicon
发明人：Cem Basceri申请号：US11362119申请日：20060223
公开号：US20070059930A1公开日：20070315
专利附图：
摘要：The invention includes methods of forming conductive metal silicides byreaction of metal with silicon. In one implementation, such a method includes providing asemiconductor substrate comprising an exposed elemental silicon containing surface. At
least one of a nitride, boride, carbide, or oxide comprising layer is atomic layer depositedonto the exposed elemental silicon containing surface to a thickness no greater than 15Angstroms. Such layer is exposed to plasma and a conductive reaction layer including atleast one of an elemental metal or metal rich silicide is deposited onto the plasmaexposed layer. Metal of the conductive reaction layer is reacted with elemental silicon ofthe substrate effective to form a conductive metal silicide comprising contact regionelectrically connecting the conductive reaction layer with the substrate. Other aspectsand implementations are contemplated.
申请人：Cem Basceri
地址：Reston VA US
国籍：US
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