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专利名称：Trench transistor and manufacturing
method of the trench transistor
发明人：Martin Poelzl,Franz Hirler申请号：US13170091申请日：20110627公开号：US08633539B2公开日：20140121
专利附图：
摘要：A semiconductor device includes a semiconductor body including a first surfaceand a second surface. The semiconductor device further includes a trench structureextending into the semiconductor body from the first surface. The trench structure
includes a first gate electrode part and a first gate dielectric part in a first part of thetrench structure, and a second gate electrode part and a second gate dielectric part in asecond part of the trench structure. A width of the trench structure in the first part isequal to the width of the trench structure in the second part. The semiconductor devicefurther includes a body region adjoining the first and second gate dielectric parts at aside wall of the trench structure. A distance dbetween a bottom edge of the first gatedielectric part and the first surface and a distance dbetween a bottom edge of thesecond gate dielectric part and the first surface satisfies 50 nm
申请人：Martin Poelzl,Franz Hirler
地址：Ossiach AT,Isen DE
国籍：AT,DE
代理机构：Murphy, Bilak & Homiller, PLLC
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