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专利名称：Method of fabricating an antifuse发明人：Steve S. Chiang,Wenn-Jei Chen申请号：US08/501596申请日：19950711公开号：US05856234A公开日：19990105
摘要：An antifuse fabrication process includes the steps of forming a lower antifuseelectrode, forming an insulating layer over the lower antifuse electrode, forming anantifuse aperture in the insulating layer, forming a dielectric antifuse material including afirst layer comprising silicon dioxide and a second layer comprising silicon nitride over theantifuse insulating layer, etching the silicon nitride layer to form a small layer of siliconnitride in a region centered over the antifuse aperture, optionally forming a thirddielectric antifuse layer comprising silicon dioxide, and forming an upper antifuseelectrode. Alternatively, the first, second, and third layers of dielectric antifuse materialmay be formed and then etched to form a small composite sandwich structure of siliconnitride and silicon dioxide over the first silicon dioxide layer in a region centered over theantifuse aperture prior to forming an upper antifuse electrode.
申请人：ACTEL CORPORATION
代理机构：D'Alessandro & Ritchie
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