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专利名称：Method and device for charging integrated
circuits and structures with a pulsed heavycurrent
发明人：Horst Gieser申请号：US09508419申请日：20000313公开号：US06512362B1公开日：20030128
专利附图：
摘要：For a quantification of the electrostatic responsiveness and for the extraction ofhigh-current parameters of integrated circuits and individual structures (DUT—“Device
under Test”) a method and a device are proposed wherein a high current pulse can beinjected via a terminal into the DUT under strictly defined marginal conditions. Thesubstrate into which the circuit to be analysed is integrated, together with the referenceelectrode disposed at a defined spacing, forms a capacitor dependent on the actualcircuit and determining the loading parameters, which capacitor has a dielectric
consisting, as a rule, of air. The method is characterised by an intrinsic impedance which isalmost constant throughout the entire system and defined by the mechanical andmaterial properties. It is also possible to use a complete semiconductor wafer including aplurality of circuits as substrate.
申请人：FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTENFORSCHUNG E.V.
代理机构：Venable
代理人：Robert Kinberg,Jeffri A. Kaminski
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