SUD08P06-155L_08资料

New Product

SUD08P06-155L

Vishay Siliconix

P-Channel 60-V (D-S), 175 °C MOSFET

T

PRODUCT SUMMARY

VDS (V)- 60

rDS(on) (Ω)0.155 at VGS = - 10 V 0.280 at VGS = - 4.5 V

ID (A)- 8.4- 7.4

Qg (Typ)12.5

FEATURES

•TrenchFET® Power MOSFETS

•175 °C Rated Maximum Junction Temperature

RoHSCOMPLIANTSTO-252GDrain Connected to TabGDSDP-Channel MOSFETTop ViewOrdering Information: SUD08P06-155L-E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS TC = 25°C, unless otherwise noted

Parameter

Gate-Source Voltage

Continuous Drain Current (TJ = 175 °C)Pulsed Drain Current

Continuing Source Current (Diode Conduction)Avalanche Current

Single Pulse Avalanche EnergyMaximum Power Dissipation

Operating Junction and Storage Temperature Range

L = 0.1 mHTC = 25 °CTA = 25 °CTC = 25 °CTC = 100 °C

Symbol LimitVGSIDIDMISIASEASPDTJ, Tstg

± 20- 8.4- 6- 18- 8.4- 127.225a2b- 55 to 175

mJW°CA

Unit V

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-AmbientbJunction-to-Case

Notes:

a. See SOA curve for voltage derating. b. Surface Mounted on 1\" x 1\" FR-4 boad.

t ≤ 10 secSteady State

Symbol ypicalRthJARthJC

20625

Maximum

25756

°C/WUnit Document Number: 73209S-71660-Rev. B, 06-Aug-07www.vishay.com

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New Product

SUD08P06-155L

Vishay Siliconix

SPECIFICATIONS TJ = 25°C, unless otherwise noted

Parameter Symbol est Conditions Min ypaMaxUnit Static

Drain-Source Breakdown VoltageGate Threshold VoltageGate-Body Leakage

Zero Gate Voltage Drain CurrentOn-State Drain Currentb

V(BR)DSSVGS(th) IGSSIDSSID(on)

VGS = 0 V, ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 20 V VDS = - 60 V, VGS = 0 V VDS = - 60 V, VGS = 0 V, TJ = 125 °C VDS = - 60 V, VGS = 0 V, TJ = 175 °C

VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 5 A

Drain-Source On-State Resistanceb

rDS(on)

VGS = - 10 V, ID = - 5 A, TJ = 125 °CVGS = - 10 V, ID = - 5 A, TJ = 175 °C

VGS = - 4.5 V, ID = - 2 A

Forward TransconductancebDynamicInput CapacitanceOutput Capacitance

Reverse Transfer CapacitanceTotal Gate ChargeGate-Source ChargeGate-Drain ChargeGate ResistanceTurn-On Delay TimecRise Timec

Turn-Off Delay TimecFall TimecPulsed CurrentForward VoltagebReverse Recovery TimeReverse Recovery Time

gfs CissCossCrss QgQgs Qgd Rgtd(on) tr

f = 1 MHz

VDS = - 30 V, VGS = - 10 V, ID = - 8.4 A VDS = - 25 V, VGS = 0 V, f = 1 MHz

VDS = - 15 V, ID = - 5 A

0.1588450654012.52.33.28.05

10252512- 20

IF = - 2 A, VGS = 0 VIF = - 8 A, di/dt = 100 A/µs

- 0.95080

- 1.380120

AVnsnCnsΩ

19

nCpF

- 10

0.125

0.1550.2800.3500.280

SΩ

- 60- 1.0

- 2.0

- 3.0± 100- 1- 50- 150

AµAVnA

14VDD = - 30 V, RL = 3.57 Ω

ID ≅ - 8.4 A, VGEN = - 10 V, RG = 2.5 Ωtd(off)

TT15

tf7

ISMVSDtrrQrr

Source-Drain Diode Ratings and Characteristics (TC = 25°C)bNotes:

a. Guaranteed by design, not subject to production testing.b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.

www.vishay.com2Document Number: 73209S-71660-Rev. B, 06-Aug-07

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New Product

SUD08P06-155L

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TYPICAL CHARACTERISTICS 25°C unless noted

30VGS = 10 thru 6 V24ID- Drain Current (A)5 V18ID- Drain Current (A)1620TC = - 55 °C 25 °C12125 °C1284 V63 V00246810VDS- Drain-to-Source Voltage (V)400.00.51.01.52.02.53.03.54.04.55.05.5VGS- Gate-to-Source Voltage (V)Output Characteristics

12TC = - 55 °C 10gfs- Transconductance (S)25 °C125 °CrDS(on)- On-Resistance (Ω)0.250.30Transfer Characteristics

80.20VGS = 4.5 VVGS = 10 V60.1540.1020.05002468100.00048121620ID- Drain Current (A)ID- Drain Current (A)Transconductance

800700VGS- Gate-to-Source Voltage (V)600C- Capacitance (pF)500400300200Coss10000Crss102030405060Ciss1620On-Resistance vs. Drain Current

VDS = 30 VID = 8.4 A128400510152025VDS- Drain-to-Source Voltage (V)Qg- Total Gate Charge (nC)Capacitance

Document Number: 73209S-71660-Rev. B, 06-Aug-07

Gate Charge

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New Product

SUD08P06-155L

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TYPICAL CHARACTERISTICS 25°C unless noted

2.3VGS= 10 VID = 50 A1rDS(on)- On-Resistance(Normalized)1.7IS- Source Current (A)TJ= 150 °C102.01.40.11.1TJ= 25 °C0.010.80.001-2502550751001251501750.00.20.40.60.81.0TJ- Junction Temperature (°C)VSD- Source-to-Drain Voltage (V)0.5-50On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

THERMAL RATINGS

1010010 µs*Limited by rDS(on)100 µs1 ms10 ms100 ms, DC0.18ID- Drain Current (A)ID- Drain Current (A)1061420.01TC = 25 °CSingle Pulse002550751001251501750.0010.1TC- Case Temperature (°C)110100VDS- Drain-to-Source Voltage (V)*VGS minimum VGS at which rDS(on)isspecifiedDrain Current vs. Case TemperatureSafe Operating Areawww.vishay.com4Document Number: 73209S-71660-Rev. B, 06-Aug-07

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SUD08P06-155L

Vishay Siliconix

THERMAL RATINGS

21Normalized Effective TransientThermal ImpedanceDuty Cycle = 0.50.20.10.10.050.02Single Pulse0.01410-−10-310-210-1110100600Square Wave Pulse Duration (sec)Normalized Thermal Transient Impedance, Junction-to-Ambient

21Normalized Effective TransientThermal ImpedanceDuty Cycle = 0.50.20.10.10.050.02Single Pulse0.01410-−10-310-210-1110100600Square Wave Pulse Duration (sec)Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability

data, see http://www.vishay.com/ppg?73209.

Document Number: 73209S-71660-Rev. B, 06-Aug-07www.vishay.com

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Vishay

Disclaimer

All product specifications and data are subject to change without notice.

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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.

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Document Number: 91000Revision: 18-Jul-08

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