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专利名称：Quantum well structure and semiconductor
device using the same
发明人：Akiba, Shigeyuki,Usami, Masashi,Matsushima,
Yuichi,Sakai, Kazuo,Utaka, Katsuyuki
申请号：EP307615.8申请日：190727公开号：EP0353054A3公开日：19910313
专利附图：
摘要：A quantum well structure comprising a quantum well layer (3,9) of thicknesssubstantially equal to the de Broglie wavelength of electrons and carrier confinement
layers (2,4) of an energy gap greater than that of the quantum well layer. A secondmaterial (9) of a lattice constant different from that of a first material (3) primarily for thequantum well layer, is disposed in the quantum well layer to provide a phase shift in theperiod of the crystal lattice of the first material, thereby forming energy levels in theforbidden band of the quantum well layer. A semiconductor device employing such aquantum well structure is so constructed as to utilize its physical phenomenon which iscaused by the energy levels in the forbidden band. This allows for ease of fabrication ofan intermediate infrared or blue light emitting device.
申请人：KOKUSAI DENSHIN DENWA KABUSHIKI KAISHA
地址：2-3-2, Nishishinjuku Shinjuku-ku Tokyo-to JP
国籍：JP
代理机构：Lawrence, Richard Anthony
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