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专利名称：Quantum well structure and semiconductor
device using it and production method ofsemiconductor element
发明人：Noriyuki Futagawa申请号：US10503269申请日：20030131公开号：US07183584B2公开日：20070227
专利附图：
摘要：A semiconductor element excellent in luminous efficiency which sufficientlyeliminates the effect of a piezo-electric field with the crystallinity of an active layer well
retained. A quantum well active layer has a laminated structure in which a barrier layerundoped region ((InGaN layer ), a quantum well layer (undoped InGaN layer ) and abarrier layer n-type region (n-type InGaN layer ) are formed in this order. The Siconcentration of a barrier layer n-type region is up to 5E18 cm−3.
申请人：Noriyuki Futagawa
地址：Tokyo JP
国籍：JP
代理机构：Young & Thompson
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