SI4630DY

New Product

Vishay Siliconix

N-Channel 25-V (D-S) MOSFET

U

PRODUCT SUMMARY

VDS (V)25

rDS(on) (Ω)0.0027 at VGS = 10 V 0.0032 at VGS = 4.5 V

ID (A)3629

a

FEATURES

Qg (Typ)49 nC

•TrenchFET® Power MOSFET •100 % Rg Tested

RoHSCOMPLIANTAPPLICATIONS

•Synchronous Buck - Low Side

- Notebook- Server

U

- Workstation

•Synchronous Rectifier - POL

SO-8DSSSG1234Top ViewSOrdering Information:Si4630DY-T1-E3 (Lead (Pb)-free)N-Channel MOSFET8765DDDDGABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit nit VDSDrain-Source Voltage 25

V

VGS± 16Gate-Source Voltage

TC = 25 °C40TC = 70 °C32

Continuous Drain Current (TJ = 150 °C)ID

TA = 25 °C27b, cTA = 70 °C21b, cA

IDM70Pulsed Drain Current

TC = 25 °C7.0

ISContinuous Source-Drain Diode Current

TA = 25 °C3.0b, cIASSingle Pulse Avalanche Current30

L = 0.1 mH

mJEASAvalanche Energy45

TC = 25 °C7.8TC = 70 °C5.0

PDMaximum Power Dissipation W

TA = 25 °C3.5b, cTA = 70 °C2.2b, cTJ, TstgOperating Junction and Storage Temperature Range - 55 to 150

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum nit RthJAt ≤ 10 sec2935Maximum Junction-to-Ambientb, d

°C/W

RthJF1316Maximum Junction-to-Foot (Drain)Steady StateNotes:

a.Based on TC = 25 °C.

b.Surface Mounted on 1\" x 1\" FR4 board.c.t = 10 sec.

d.Maximum under Steady State conditions is 80 °C/W.Document Number: 73685S-60555–Rev. B, 3-Apr-06

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Si4630DY

Vishay Siliconix

New Product

SPECIFICATIONS TJ = 25 °C, unless otherwise notedStaticDrain-Source Breakdown VoltageVDS Temperature CoefficientVGS(th) Temperature CoefficientGate-Source Threshold VoltageGate-Source LeakageZero Gate Voltage Drain CurrentOn-State Drain CurrentaDrain-Source On-State ResistanceaForward TransconductanceaDynamicbInput CapacitanceOutput CapacitanceReverse Transfer CapacitanceTotal Gate ChargeGate-Source ChargeGate-Drain ChargeGate ResistanceTurn-On Delay TimeRise TimeTurn-Off DelayTimeFall TimeTurn-On Delay TimeRise TimeTurn-Off DelayTimeFall TimeDrain-Source Body Diode CharacteristicsContinous Source-Drain Diode CurrentPulse Diode Forward CurrentaBody Diode VoltageBody Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeReverse Recovery Fall TimeReverse Recovery Rise TimeISISMVSDtrrQrrtatbIF = 13 A, di/dt = 100 A/µs, TJ = 25 °CIS = 3 A0.7247502324TC = 25 °C7701.17075AVnsnCnsVDSΔVDS/TJΔVGS(th)/TJVGS(th) IGSSIDSSID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rgtd(on) trtd(off) tftd(on) trtd(off) tfVDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 ΩVDD = 15 V, RL = 1.5Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ωf = 1 MHzVDS = 15 V, VGS = 10 V, ID = 20 AVDS = 15 V, VGS = 4.5 V, ID = 20 AVDS = 15 V, VGS = 0 V, f = 1 MHzVGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 16 V VDS = 25 V, VGS = 0 V VDS = 25 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 VVGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 15 A VDS = 15 V, ID = 20 A 300.00220.00261206670997531107.54915.713.61.537122471517932.2556185712326140nsΩ16173nCpF0.00270.00321.02528- 62.2± 100110VmV/°CVnAµAAΩSParameter Symbol Test Conditions Min TypMaxnit 6090U915Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.

www.vishay.com2Document Number: 73685S-60555–Rev. B, 3-Apr-06

Si4630DY

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

7060ID– Drain Current (A)504030201000.0VGS = 10 thru 3 V1.0ID– Drain Current (A)1.2Vishay Siliconix

0.80.625 °C0.40.2TC = 125 °C 0.51.01.52.02.50.00.0- 55 °C0.61.21.82.43.0VDS – Drain-to-Source Voltage (V)Output CharacteristicsVGS – Gate-to-Source Voltage (V)Transfer Characteristics8500CissC – Capacitance (pF)0.0034rDS(on)– On-Resistance (mΩ)0.0030VGS = 4.5 V0.0026VGS = 10 V0.00226800510034001700Crss05Coss0.00180102030405060010152025ID – Drain Current (A)VDS – Drain-to-Source Voltage (V)On-Resistance vs. Drain Current and Gate Voltage

10VGS– Gate-to-Source Voltage (V)ID = 20 A8VDS = 10 VrDS(on) – On-Resistance(Normalized)1.41.6ID = 20 ACapacitanceVGS = 4.5 V6VDS = 15 V1.2VGS = 10 V4VGS = 20 V1.020.80022446688110Qg – Total Gate Charge (nC)0.6- 50- 250255075100125150TJ– Junction Temperature (°C)Gate Charge

On-Resistance vs. Junction Temperature

Document Number: 73685S-60555–Rev. B, 3-Apr-06www.vishay.com

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Si4630DY

Vishay Siliconix

100.000rDS(on)– Drain-to-Source On-Resistance (Ω)New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.01010.000IS– Source Current (A)0.0081.000150 °C0.0060.100 25 °C 0.004125 °C0.0100.002 25 °C 0.0010.000.20.40.60.81.01.2VSD – Source-to-Drain Voltage (V)0.0000123456710VGS – Gate-to-Source Voltage (V)Source-Drain Diode Forward Voltage0.5ID = 250µA0.2ID = 5 mAVGS(th) (V)- 0.1160200On-Resistance vs. Gate-to-Source VoltagePower (W)120- 0.480- 0.740- 1.0- 50- 25025507510012515000.0010.010.1Time (sec)110TJ – Temperature (°C)Threshold Voltage

100*Limited by rDS(on)10ID– Drain Current (A)Single Pulse Power, Junction-to-Ambient

1 ms10 ms1100 ms1 s0.1TA = 25 °C Single Pulse0.010.1*VGS11010 sdc100VDS – Drain-to-Source Voltage (V) minimum VGS at which rDS(on)isspecifiedSafe Operating Area, Junction-to-Ambient

www.vishay.com4Document Number: 73685S-60555–Rev. B, 3-Apr-06

Si4630DY

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

454035ID – Drain Current (A)3025201510500255075100125150Package LimitedVishay Siliconix

TC – Case Temperature (°C)Current Derating*102.081.66PowerPower41.20.820.4002550751001251500.00255075100125150TC – Case Temperature (°C)TC – Case Temperature (°C)Power, Junction-to-FootPower, Junction-to-Ambient* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the packagelimit.

Document Number: 73685S-60555–Rev. B, 3-Apr-06www.vishay.com

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Si4630DY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1Duty Cycle = 0.5Normalized Effective TransientThermal Impedance0.20.10.10.05PDMt1Notes:0.02t21. Duty Cycle, D =2. Per Unit Base = RthJA = 60 °C/W t1t2Single Pulse0.0110-410-310-210-11Square Wave Pulse Duration (sec)3. TJM – TA = PDMZthJA(t)4. Surface Mounted101001000Normalized Thermal Transient Impedance, Junction-to-Ambient

1Duty Cycle = 0.5Normalized Effective TransientThermal Impedance0.20.10.10.050.02Single Pulse0.010.00010.0010.010.1110Square Wave Pulse Duration (sec)Normalized Thermal Transient Impedance, Junction-to-CaseVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliabilitydata, see http://www.vishay.com/ppg?73685.

www.vishay.com6Document Number: 73685S-60555–Rev. B, 3-Apr-06

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.

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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000Revision: 18-Jul-08

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