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专利名称：Method and Apparatus for Memory Repair
With Redundant Columns
发明人：Chia-Jung Chen,Su-Chueh Lo,Chin-Hung
Chang,Chen-Chia Fan,Kuen-Long Chang
申请号：US123235申请日：20100929
公开号：US20120075943A1公开日：20120329
专利附图：
摘要：A first redundant column is used to repair multiple defects in an array ofmemory cells. The defects include at least a first defect and a second defect in different
main columns of a plurality of main columns in the array. However, all of the multipledefects repaired by the first redundant column are not required to be in different maincolumns. The array is arranged into a plurality of rows accessed by row addresses andthe plurality of main columns accessed by column addresses.
申请人：Chia-Jung Chen,Su-Chueh Lo,Chin-Hung Chang,Chen-Chia Fan,Kuen-LongChang
地址：Zhubei City TW,Hsinchu TW,Tainan TW,Zhubei City TW,Taipei TW
国籍：TW,TW,TW,TW,TW
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