专利内容由知识产权出版社提供
专利名称：Non-volatile memory and method of
operation
发明人：Shui-Chin Huang,Chien-Hung Chen申请号：US10707108申请日：20031121公开号：US06977869B2公开日：20051220
专利附图：
摘要：A method of programming and erasing an electrically erasable programmableread-only memory (EEPROM)device includes performing a band-to-band tunnelinginduced hot-electrons program and performing a Fowler-Nordheim tunneling erase. The
EEPEOM device includes a P-type transistor, an N-type transistor, and a double gate P-type transistor. A source of the P-type transistor and the N-type transistor are
respectively electrically connected to a program bit-line and an erase bit-line. A drain ofthe double gate P-type transistor is electrically connected to a drain of the P-typetransistor and a drain of the N-type transistor.
申请人：Shui-Chin Huang,Chien-Hung Chen
地址：Tai-Nan TW,Hsin-Chu TW
国籍：TW,TW
代理人：Winston Hsu
更多信息请下载全文后查看
