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专利名称：UV-programmed P-type mask ROM and
fabrication thereof
发明人：Tung-Cheng Kuo,Chien-Hung Liu,Shyi-Shuh
Pan,Shou-Wei Huang
申请号：US10680023申请日：20031006
公开号：US20040065928A1公开日：20040408
专利附图：
摘要：A method for fabricating an UV-programmed P-type Mask ROM is described.The threshold voltages of all memory cells are raised at first to make each memory cell
be in a first logic state, in which the channel is hard to switch on, in order to prevent aleakage current. After the bit lines and the word lines are formed, the Mask ROM isprogrammed by irradiating the substrate with UV light to inject electrons into the ONOlayer under the openings to make the memory cells under the openings be in a secondlogic state.
申请人：KUO TUNG-CHENG,LIU CHIEN-HUNG,PAN SHYI-SHUH,HUANG SHOU-WEI
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