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New Product
MSS1P2L & MSS1P3L
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifiers
FEATURES
•Very low profile - typical height of 0.68 mm
eSMPTM Series
•Ideal for automated placement
•Low forward voltage drop, low powerlosses •High efficiency
Top ViewBottom View
MicroSMP
•Meets MSL level 1, per J-STD-020, LF maximumpeak of 260 °C •Component in accordance to RoHS 2002/95/ECand WEEE 2002/96/EC •Halogen-free
PRIMARY CHARACTERISTICS
IF(AV)VRRMIFSM
VF at IF = 1.0 A
TJ max.
1.0 A20 V, 30 V25 A0.35 V150 °C
MECHANICAL DATACase: MicroSMP
Molding compound meets UL 94V-0 flammabilityrating.
Base P/N-E3 - RoHS compliant, commercial gradeBase P/N-M3 - halogen-free and RoHS compliant,commercial grade
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,freewheeling, dc-to-dc converters, and polarityprotection applications.
Terminals: Matte tin plated leads, solderable perJ-STD-002 and JESD22-B102
E3 and M3 suffix meets JESD 201 class 1A whiskertest
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETERDevice marking code
Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1)Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
Operating junction and storage temperature range
VRRMIF(AV)IFSMTJ, TSTGSYMBOL
MSS1P2L12L20
1.025- 55 to + 150
MSS1P3L13L30
V AA°CUNIT
Document Number: 020Revision: 04-Aug-08
For technical questions within your region, please contact one of the following:PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.comwww.vishay.com
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元器件交易网www.cecb2b.com
MSS1P2L & MSS1P3L
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneousforward voltage (1)
TEST CONDITIONSIF = 0.5 AIF = 1.0 AIF = 0.5 AIF = 1.0 A
TJ = 25 °C
VF
TJ = 125 °C
IRCJSYMBOL
TYP.0.390.440.280.35156.065
MAX.-0.50-0.4025020-UNIT
V
TJ = 25 °C
Maximum reverse current (2) rated VR
TJ = 125 °CTypical junction capacitance
4.0 V, 1 MHz
µAmA pF
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
RθJA RθJLRθJC
1253040
PARAMETER SYMBOL MSS1P2LMSS1P3LUNIT Typical thermal resistance (1)
°C/W
Note:
(1)Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 6.0 x 6.0 mm copper pad areas. RθJL is measured
at the terminal of cathode band. RθJC is measured at the top center of the body
ORDERING INFORMATION (Example)
PREFERRED P/NMSS1P3L-E3/AMSS1P3L-M3/A
UNIT WEIGHT (g)
0.0060.006
PREFERRED PACKAGE CODE
AA
BASE QUANTITY
45004500
DELIVERY MODE
7\" diameter plastic tape and reel7\" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES(TA = 25 °C unless otherwise noted)
1.20.5Resistive or Inductive Load1.00.80.60.40.200255075100125150TL Measuredat the Cathode Band TerminalD = 0.3D = 0.5D = 0.8Average Forward Rectified Current (A)Average Power Loss (W)0.4D = 0.10.3D = 0.2D = 1.00.2T0.1D = tp/T000.20.40.60.81.01.2tpLead Temperature (°C)Average Forward Current (A)Figure 1. Maximum Forward Current Derating CurveFigure 2. Forward Power Loss Characteristics
www.vishay.com2For technical questions within your region, please contact one of the following:PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.comDocument Number: 020
Revision: 04-Aug-08
元器件交易网www.cecb2b.com
New Product
MSS1P2L & MSS1P3L
Vishay General Semiconductor
101000TJ = 150 °CTJ = 125 °CInstantaneous Forward Current (A)1Junction Capacitance (pF)0.70.81000.1TJ = 25 °C0.0100.10.20.30.40.50.6100.1110100Instantaneous Forward Voltage (V)Reverse Voltage (V)Figure 3. Typical Instantaneous Forward CharacteristicsFigure 5. Typical Junction Capacitance
1001000Transient Thermal Impedance (°C/W)Instantaneous Reverse Current (mA)Junction to Ambient10TJ = 150 °C1TJ = 125 °C1000.1100.01TJ = 25 °C0.00110203040506070809010010.010.11101001000Percent of Rated Peak Reverse Voltage (%)t - Pulse Duration (s)Figure 4. Typical Reverse CharacteristicsFigure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
MicroSMPCathode Band0.059 (1.50)0.043 (1.10)0.030 (0.75)0.022 (0.55)0.055 (1.40)0.047 (1.20)0.039 (0.98)0.031 (0.78)0.030 (0.75)0.022 (0.55)0.091 (2.30)0.083 (2.10)0.106 (2.70)0.091 (2.30)Mounting Pad Layout0.079(2.00)0.032(0.80)0.032(0.80)0.029 (0.73)0.025 (0.63)0.011 (0.27)0.005 (0.12)0.043(1.10)0.020(0.50) Document Number: 020Revision: 04-Aug-08
For technical questions within your region, please contact one of the following:PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.comwww.vishay.com
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元器件交易网www.cecb2b.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.
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Document Number: 91000Revision: 18-Jul-08
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