元器件交易网www.cecb2b.com
STP50N06STP50N06FI
N-CHANNELENHANCEMENTMODE
POWERMOSTRANSISTOR
TYPESTP50N06STP50N06FI
ssssssss
VDSS60V60V
RDS(on)<0.028Ω<0.028Ω
ID50A27A
TYPICALRDS(on)=0.022Ω
AVALANCHERUGGEDTECHNOLOGY100%AVALANCHETESTED
REPETITIVEAVALANCHEDATAAT100oCLOWGATECHARGE
HIGHCURRENTCAPABILITY
175oCOPERATINGTEMPERATUREAPPLICATIONORIENTEDCHARACTERIZATION
1
2
3
1
2
3
TO-220ISOWATT220
APPLICATIONSsHIGHCURRENT,HIGHSPEEDSWITCHINGsSOLENOIDANDRELAYDRIVERSsREGULATORSsDC-DC&DC-ACCONVERTERSsMOTORCONTROL,AUDIOAMPLIFIERSsAUTOMOTIVEENVIRONMENT(INJECTION,ABS,AIR-BAG,LAMPDRIVERS,Etc.)
INTERNALSCHEMATICDIAGRAM
ABSOLUTEMAXIMUMRATINGS
SymbolVDSVDGRVGSIDIDIDM(•)PtotVISOTstgTj
Parameter
STP50N06
Drain-sourceVoltage(VGS=0)Drain-gateVoltage(RGS=20kΩ)Gate-sourceVoltage
DrainCurrent(continuous)atTc=25oCDrainCurrent(continuous)atTc=100oCDrainCurrent(pulsed)
TotalDissipationatTc=25oCDeratingFactor
InsulationWithstandVoltage(DC)StorageTemperature
Max.OperatingJunctionTemperature
50352001501
-65to175
1756060±20
2719200450.32000
Value
STP50N06FI
VVVAAAWW/oCV
oo
Unit
CC
(•)Pulsewidthlimitedbysafeoperatingarea
July19931/10
元器件交易网www.cecb2b.com
STP50N06/FI
THERMALDATA
TO-220
Rthj-caseRthj-ambRthc-sink
Tl
ThermalResistanceJunction-case
Max
1
62.50.5300
ThermalResistanceJunction-ambientMaxThermalResistanceCase-sinkTypMaximumLeadTemperatureForSolderingPurpose
ISOWATT220
3.33
ooo
C/WC/WC/WoC
AVALANCHECHARACTERISTICS
SymbolIAREASEARIAR
Parameter
AvalancheCurrent,RepetitiveorNot-Repetitive(pulsewidthlimitedbyTjmax,δ <1%)SinglePulseAvalancheEnergy
(startingTj=25oC,ID=IAR,VDD=25V)RepetitiveAvalancheEnergy
(pulsewidthlimitedbyTjmax,δ <1%)
AvalancheCurrent,RepetitiveorNot-Repetitive(Tc=100oC,pulsewidthlimitedbyTjmax,δ <1%)
o
MaxValue
5040010035
UnitAmJmJA
ELECTRICALCHARACTERISTICS(Tcase=25Cunlessotherwisespecified)OFF
SymbolV(BR)DSSIDSSIGSS
Parameter
Drain-source
BreakdownVoltage
TestConditions
ID=250µA
VGS=0
Min.60
2501000±100
Typ.
Max.
UnitVµAµAnA
ZeroGateVoltageVDS=MaxRating
DrainCurrent(VGS=0)VDS=MaxRatingx0.8Gate-bodyLeakageCurrent(VDS=0)
VGS=± 20V
Tc=125C
o
ON(∗)
SymbolVGS(th)RDS(on)ID(on)
Parameter
GateThresholdVoltageVDS=VGSStaticDrain-sourceOnResistance
OnStateDrainCurrent
TestConditionsID=250µA
Tc=100C
50
o
Min.2
Typ.2.90.022
Max.40.0280.056
UnitVΩΩA
VGS=10VID=25AVGS=10VID=25AVDS>ID(on)xRDS(on)maxVGS=10V
DYNAMIC
Symbolgfs(∗)CissCossCrss
Parameter
Forward
TransconductanceInputCapacitanceOutputCapacitanceReverseTransferCapacitance
TestConditions
VDS>ID(on)xRDS(on)maxVDS=25V
f=1MHz
ID=25AVGS=0
Min.17
Typ.221700630200
2200850260Max.
UnitSpFpFpF
2/10
元器件交易网www.cecb2b.com
STP50N06/FI
ELECTRICALCHARACTERISTICS(continued)SWITCHINGON
Symboltd(on)tr(di/dt)on
Parameter
Turn-onTimeRiseTime
Turn-onCurrentSlope
TestConditions
VDD=25VID=25A
VGS=10VRG=4.7 Ω
(seetestcircuit,figure3)VDD=40VID=50ARG=4.7 ΩVGS=10V(seetestcircuit,figure5)VDD=40V
ID=50A
VGS=10V
Min.
Typ.50110460
Max.70160
UnitnsnsA/µs
QgQgsQgdTotalGateChargeGate-SourceChargeGate-DrainCharge501425
70
nCnCnC
SWITCHINGOFF
Symboltr(Voff)tftc
Parameter
Off-voltageRiseTimeFallTime
Cross-overTime
TestConditions
VDD=40VID=50ARG=4.7 ΩVGS=10V(seetestcircuit,figure5)
Min.
Typ.5550110
Max.8070160
Unitnsnsns
SOURCEDRAINDIODE
SymbolISDISDM(•)VSD(∗)trrQrrIRRM
Parameter
Source-drainCurrentSource-drainCurrent(pulsed)
ForwardOnVoltageReverseRecoveryTime
ReverseRecoveryCharge
ReverseRecoveryCurrent
ISD=50A
VGS=0
1500.456
ISD=50Adi/dt=100A/µs
Tj=150oCVDD=30V
(seetestcircuit,figure5)
TestConditions
Min.
Typ.
Max.502002
UnitAAVnsµCA
(∗)Pulsed:Pulseduration=300µs,dutycycle1.5%(•)Pulsewidthlimitedbysafeoperatingarea
SafeOperatingAreasForTO-220SafeOperatingAreasForISOWATT220
3/10
元器件交易网www.cecb2b.com
STP50N06/FI
ThermalImpedeanceForTO-220
ThermalImpedanceForISOWATT220
DeratingCurveForTO-220DeratingCurveForISOWATT220
OutputCharacteristicsTransferCharacteristics
4/10
元器件交易网www.cecb2b.com
STP50N06/FI
Transconductance
StaticDrain-sourceOnResistance
GateChargevsGate-sourceVoltageCapacitanceVariations
NormalizedGateThresholdVoltagevsTemperature
NormalizedOnResistancevsTemperature
5/10
元器件交易网www.cecb2b.com
STP50N06/FI
Turn-onCurrentSlope
Turn-offDrain-sourceVoltageSlope
Cross-overTimeSwitchingSafeOperatingArea
AccidentalOverloadAreaSource-drainDiodeForwardCharacteristics
6/10
元器件交易网www.cecb2b.com
STP50N06/FI
Fig.1:UnclampedInductiveLoadTestCircuits
Fig.2:UnclampedInductiveWaveforms
Fig.3:SwitchingTimesTestCircuitsForResistiveLoad
Fig.4:GateChargeTestCircuit
Fig.5:TestCircuitForInductiveLoadSwitchingAndDiodeReverseRecoveryTime
7/10
元器件交易网www.cecb2b.com
STP50N06/FI
TO-220MECHANICALDATA
DIM.ACDD1EFF1F2GG1H2L2L4L5L6L7L9DIA.
13.02.6515.256.23.53.750.490.611.141.144.952.410.0
16.4
14.02.9515.756.63.933.85
0.5110.1040.6000.2440.1370.147
mm
MIN.4.401.232.40
1.27
0.700.881.701.705.152.710.40
0.0190.0240.0440.0440.1940.0940.393
0.5
0.5510.1160.6200.2600.1540.151
TYP.
MAX.4.601.322.72
MIN.0.1730.0480.094
0.050
0.0270.0340.0670.0670.2030.1060.409
inchTYP.
MAX.0.1810.0510.107
ACD1L2
F1DG1EDia.
F2FL5
L7
L6
L9
L4
G8/10
H2P011C
元器件交易网www.cecb2b.com
STP50N06/FI
ISOWATT220MECHANICALDATA
DIM.
MIN.
ABDEFF1F2GG1HL2L3L4L6L7Ø
28.69.815.9934.42.52.50.40.751.151.154.952.410
16
30.610.616.49.33.2
1.1260.3850.6260.3540.118
mmTYP.
MAX.4.62.72.750.711.71.75.22.710.4
MIN.0.1730.0980.0980.0150.0300.0450.0450.1950.0940.393
0.630
1.2040.4170.50.3660.126
inchTYP.
MAX.0.1810.1060.1080.0270.0390.0670.0670.2040.1060.409
ABL3
L6
L7
F1Ø
FDG1EHF2123
L2
L4
P011G
G9/10
元器件交易网www.cecb2b.com
STP50N06/FI
Informationfurnishedisbelievedtobeaccurateandreliable.However,SGS-THOMSONMicroelectronicsassumesnoresponsabilityfortheconsequencesofuseofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultsfromitsuse.NolicenseisgrantedbyimplicationorotherwiseunderanypatentorpatentrightsofSGS-THOMSONMicroelectronics.Specificationsmentionedinthispublicationaresubjecttochangewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied.
SGS-THOMSONMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenapprovalofSGS-THOMSONMicroelectonics.
©1994SGS-THOMSONMicroelectronics-AllRightsReserved
SGS-THOMSONMicroelectronicsGROUPOFCOMPANIES
Australia-Brazil-France-Germany-HongKong-Italy-Japan-Korea-Malaysia-Malta-Morocco-TheNetherlands-Singapore-Spain-Sweden-Switzerland-Taiwan-Thailand-UnitedKingdom-U.S.A
10/10
