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专利名称：METHOD FOR FORMING A THIN-FILM
TRANSISTOR
发明人：Naoyuki Toyoda申请号：US11425159申请日：20060620
公开号：US20070020821A1公开日：20070125
专利附图：
摘要：A method for forming a thin-film transistor includes forming a source electrodeand a drain electrode on an element-side substrate, forming a semiconductor layer incontact with the source electrode and the drain electrode, forming a gate insulating layer
overlaid on the semiconductor layer, and forming a gate electrode overlaid on the gateinsulating layer, wherein the semiconductor layer is formed over a laser process at thestep of forming the semiconductor layer in contact with the source electrode and thedrain electrode.
申请人：Naoyuki Toyoda
地址：Suwa 392-8502 JP
国籍：JP
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